n-channel enhancement mode power mosfet semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8263 issue 2 page 1 of 3 2N6660 ? v dss = 60v , i d = 1.0a, r ds(on) = 3.0 ? fast switching ? low threshold voltage (logic level) ? low c iss ? integral source-drain body diode ? hermetic metal to39 package ? high reliability screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v ds drain ? source voltage 60v v gs gate ? source voltage 20v i d continuous drain current t c = 25c 1.0a i dm pulsed drain current (1) 3.0a p d total power dissipation at t c 25c 5w de-rate t c > 25c 40mw/c p d total power dissipation at t a 25c 725mw de-rate t a > 25c 5.8mw/c t j operating temperature range -65 to +150c t stg storage temperature range -65 to +150c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case 25 c/w r ja thermal resistance, junction to ambient 172 c/w notes notes notes notes (1) repetitive rating: pulse width limited by maximum j unction temperature (2) pulse width 300us, 2%
n-channel enhancement mode power mosfet 2N6660 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8263 issue 2 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs = 0 i d = 1.0a 60 v v ds = v gs i d = 1.0ma 0.8 2.0 t c = 125c 0.3 v gs(th) gate threshold voltage t c = -55c 2.5 v v gs = 20v v ds = 0v 100 i gss gate-source leakage current t c = 125c 500 na v gs = 0 v ds = 48v 1.0 i dss zero gate voltage drain current t c = 125c 100 a i d(on) (2) on-state drain current v ds = 10v v gs = 10v 1.5 a v gs = 5v i d = 0.3a 5.0 v gs = 10v i d = 1.0a 3.0 r ds(on) (2) static drain-source on-state resistance t c = 125c 5.6 g fs (2) forward transconductance v ds = 25v i d = 0.5a 170 m v sd (2) body diode forward voltage v gs = 0 i s = 1.0a 0.7 1.6 v t rr (2) body diode reverse recovery v gs = 0 i s = 1.0a 350 ns dynamic characteristics c iss input capacitance v gs = 0 50 c oss output capacitance v ds = 25v 40 c rss reverse transfer capacitance f = 1.0mhz 10 pf t d(on) turn-on delay time v dd = 25v 10 t d(off) turn-off delay time i d = 1.0a r g = 50 10 ns
n-channel enhancement mode power mosfet 2N6660 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8263 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045) to3 9 package (to - 20 5 a d ) pin 1 - source pin 2 - gate pin 3 / case - drain
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